The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode
Özet
An Au/n-InP/In diode has been fabricated in the laboratory conditions and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 degrees C for 3 min in N-2 atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias I-V and reverse bias C-V characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode. (C) 2014 Elsevier Ltd. All rights reserved,
Anahtar kelimeler
Atıf için künye
Çakıcı Can, T., Sağlam, M., & Güzeldir, B. (2014). The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 28, 121–126. https://doi.org/10.1016/j.mssp.2014.07.037
BibTeX
@article{cakicican2014-64183,
author = {Çakıcı Can, Tuba and Sağlam, Mustafa and Güzeldir, Betül},
title = {The effects of thermal annealing on the electrical characteristics of Au/n-InP/In diode},
journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
year = {2014},
volume = {28},
pages = {121--126},
issn = {1369-8001},
doi = {10.1016/j.mssp.2014.07.037},
url = {https://akademik.atauni.edu.tr/yayinlar/64183-the-effects-of-thermal-annealing-on-the-electrical-characteristics-of-aun-inpin}
}