Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height
Özet
The current-voltage (I-V) characteristics of Au/n-InP Schottky contacts have been measured in the temperature range of 70-300K by steps of 10K. Our data of the Au/n-InP Schottky contact strongly suggest that the temperature-dependent electron transport at the metal-semiconductor interface is significantly affected by the barrier inhomogeneity. The distribution of local effective SBHs has been modeled by a summation of existence of double Gaussian barrier heights which represents the high- and low-barrier of the full distribution in 170-300 and 70-170 K ranges. (C) 2009 Elsevier B.V. All rights reserved.
Anahtar kelimeler
Atıf için künye
Cimilli, F. E., Sağlam, M., Efeoğlu, H., & Turut, A. (2009). Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height. PHYSICA B-CONDENSED MATTER, 404, 1558–1562. https://doi.org/10.1016/j.physb.2009.01.018
BibTeX
@article{cimilli2009-64182,
author = {Cimilli, F. E. and Sağlam, Mustafa and Efeoğlu, Hasan and Turut, Abdulmecit},
title = {Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height},
journal = {PHYSICA B-CONDENSED MATTER},
year = {2009},
volume = {404},
pages = {1558--1562},
issn = {0921-4526},
doi = {10.1016/j.physb.2009.01.018},
url = {https://akademik.atauni.edu.tr/yayinlar/64182-temperature-dependent-current-voltage-characteristics-of-the-aun-inp-diodes-with}
}