Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes
Özet
In this study, it is aimed to produce Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes and to calculate the diode parameters such as ideality factor, barrier height and series resistance by using timedependent current-voltage (I-V) measurements. First, pure Ti metal was evaporated on the matt surface of the n-Si semiconductors and annealed at 420 degrees C in nitrogen atmosphere. Secondly, Au and Cu metals and AuCu alloy were evaporated on the other surface of n-Si semiconductors. So, Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes were obtained. Finally, I-V measurements of the Schottky diodes were taken at specified time intervals (immediately,1, 7, 15, 30, 90, 180 and 365 days) and time-dependent diode parameters were calculated using the Thermionic Emission, Cheung and Norde methods. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.
Anahtar kelimeler
Atıf için künye
Taşer, A., Orhan, Z., Aykaç, C., Özakın, O., Güzeldir, B., & Sağlam, M. (2021). Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes. Materials Today: Proceedings, 46, 6954–6959. https://doi.org/10.1016/j.matpr.2021.03.270
BibTeX
@article{taser2021-64165,
author = {Taşer, Ahmet and Orhan, Zeynep and Aykaç, Cengiz and Özakın, Oğuzhan and Güzeldir, Betül and Sağlam, Mustafa},
title = {Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes},
journal = {Materials Today: Proceedings},
year = {2021},
volume = {46},
pages = {6954--6959},
issn = {2214-7853},
doi = {10.1016/j.matpr.2021.03.270},
url = {https://akademik.atauni.edu.tr/yayinlar/64165-effects-of-aging-on-the-electrical-properties-of-aun-siti-cun-siti-and-aucun}
}