Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer

In this study, the microstructural properties of Silicon carbide (SiC) thin film deposited by radio frequency (RF)

sputtering technique and the effects of SiC as an interlayer on the barrier parameters of n-GaP/Pd and n-InP/Pd

junctions were examined comparatively. Firstly, Al/n-GaP/Pd and In/n-InP/Pd diode structures were fabricated

and their barrier parameters were analyzed using Rhoderick, Norde, Cibils and Chattopadhyay methods at room

temperature. Then, SiC thin films, which were deposited on Al/n-GaP and In/n-InP semiconductors, respectively,

with the help of SiC target using RF sputtering technique, were inserted into the In/n-InP/Pd and Al/n-GaP/Pd

junctions as an interlayer, and In/n-InP/SiC/Pd and Al/n-GaP/SiC/Pd structures were produced. Microstructures

of SiC thin films were evaluated with the help of x-ray diffraction (XRD), field emission scanning electron microscopy

(FE-SEM) and energy dispersive x-ray analysis (EDX) measurements. In order to interpret the barrier

properties of Al/n-GaP/SiC/Pd and In/n-InP/SiC/Pd structures in detail and to compare them with those without

interlayers, current-voltage (I–V) measurements were measured at room temperature under dark conditions and

the junction parameters were recalculated with the help of the methods mentioned above. It has been determined

that SiC interlayers play important roles on the barrier properties of Al/n-GaP/Pd and In/n-InP/Pd diode

structures.