Electrical Characterization of In/p-GaSe:Cd/Au-Ge Single Crystal Grown by Bridgman/Stockbarger Method
Özet
The temperature dependence of current voltage (I-V) characteristics of Au Ge/p-GaSe:Cd Schottky diode (SD) has been investigated in the temperature range of 40-360 K with a temperature step of 10 K under dark conditions. The characteristic parameters of the SD such as barrier height, ideality factor and series resistance have been determined from the I-V measurements. It has been shown that the ideality factor increases while the barrier height decreases with decreasing temperature. The values of series resistance obtained from modified Norde's function. Series resistance values increase with decreasing temperature.
Atıf için künye
Gürbulak, B., Sata, M., Ashkhasi, A., Yıldırım, M., & Duman, S. (2016). Electrical Characterization of In/p-GaSe:Cd/Au-Ge Single Crystal Grown by Bridgman/Stockbarger Method. 32nd International Physics Congress of Turkish-Physical-Society (TPS), Bodrum. https://doi.org/10.1063/1.4976476
BibTeX
@inproceedings{gurbulak2016-64072,
author = {Gürbulak, Bekir and Sata, Mehmet and Ashkhasi, Afsoun and Yıldırım, Muhammet and Duman, Songul},
title = {Electrical Characterization of In/p-GaSe:Cd/Au-Ge Single Crystal Grown by Bridgman/Stockbarger Method},
booktitle = {32nd International Physics Congress of Turkish-Physical-Society (TPS)},
address = {Bodrum},
year = {2016},
doi = {10.1063/1.4976476},
url = {https://akademik.atauni.edu.tr/yayinlar/64072-electrical-characterization-of-inp-gasecdau-ge-single-crystal-grown-by}
}