INVESTIGATION OF GAS SENSOR PROPERTIES OF AS-DEPOSITEDAND Al, Zn DOPED NiCr2O4

In this experimental study, as-deposited, Al and Zn doped NiCr2O4 thin films were grown under 30% oxygen partial pressure by Radio Frequency Magnetron Sputtering (RFMS) technique. The structural, optical and morphological properties of all the NiCr2O4 films were investigated. It was observed that Al and Zn additives made on NiCr2O4 thin films produced peaks at different angles (XRD) diffraction patterns. However, as a result of Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) measurements, surface morphology, which is of great importance for thin film gas sensor applications, has been observed to vary with the addition of different elements. In the final stage of the study, the gas sensor properties of the films in the relativly high tempureture (200-300 0C) were determined. According to the results obtained; The gas sensor properties of NiCr2O4, Al and Zn doped NiCr2O4 thin films were investigated and the changes made in the gas sensor properties were determined by determining the most suitable gas sensor type among these three different samples.