Comparison of the as deposited NiCr2O4:Al and NiO:AlThin Films Together withDevices Grown By Radio Frequency Sputtering Technique
Özet
In this study, as-deposited and Al doped NiCr2O4, NiO thin films were grown under 30% oxygen partial pressure by Radio Frequency Magnetron Sputtering (RFMS) technique. The structural, optical and morphological properties of as-deposited and Al dopped NiCr2O4, NiO films were investigated. X-Ray Diffraction (XRD) measurements has shown that doping with Al changes the diffraction peak position. Again, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) measurements has shown a significant change of the surface morphologies by the Al doping. Gas sensor properties of the films in the relatively high temperature (200-300 0C) were performed and comparison has been made by the device performances of the two different kind of films.
Atıf için künye
Sarıtaş, S., Turgut, E., Yıldırım, M., & GÜR, E. (2019). Comparison of the as deposited NiCr2O4:Al and NiO:AlThin Films Together withDevices Grown By Radio Frequency Sputtering Technique. 3rd International Conference on AdvancedEngineering Technologies, Bayburt (ss. 1221–1225).
BibTeX
@inproceedings{saritas2019-64045,
author = {Sarıtaş, Sevda and Turgut, Erdal and Yıldırım, Muhammet and GÜR, EMRE},
title = {Comparison of the as deposited NiCr2O4:Al and NiO:AlThin Films Together withDevices Grown By Radio Frequency Sputtering Technique},
booktitle = {3rd International Conference on AdvancedEngineering Technologies},
address = {Bayburt},
year = {2019},
pages = {1221--1225},
url = {https://akademik.atauni.edu.tr/yayinlar/64045-comparison-of-the-as-deposited-nicr2o4al-and-nioalthin-films-together}
}