Modification of exciton binding energy in the horizontal Bridgman-Stockbarger growth of InSe by Ho doping
Özet
Undoped InSe and Ho doped InSe single crystals with various Ho concentrations were grown by the horizontal Bridgman-Stockbarger method. The absorption measurements were carried out in the temperature range 10-320 K. Exciton binding energies, steepness parameters, and Urbach energies of InSe and InSe:Ho samples were investigated as a function of temperature. Ho doping caused a shift towards longer wavelengths in the absorption edge. In general, Ho doping causes certain increases in the exciton binding energy and Urbach energy, and a decrease in the steepness parameter. An enhancement of exciton binding energy up to about 55 meV is observed at 0.0025 mass ratio of Ho. (C) 2004 American Institute of Physics.
Atıf için künye
ATEŞ, A., Tüzemen, S., & Yıldırım, M. (2004). Modification of exciton binding energy in the horizontal Bridgman-Stockbarger growth of InSe by Ho doping. JOURNAL OF APPLIED PHYSICS, 96(6), 3324–3327. https://doi.org/10.1063/1.1773377
BibTeX
@article{ates2004-64032,
author = {ATEŞ, Azman and Tüzemen, Sebahattin and Yıldırım, Muhammet},
title = {Modification of exciton binding energy in the horizontal Bridgman-Stockbarger growth of InSe by Ho doping},
journal = {JOURNAL OF APPLIED PHYSICS},
year = {2004},
volume = {96},
number = {6},
pages = {3324--3327},
issn = {0021-8979},
doi = {10.1063/1.1773377},
url = {https://akademik.atauni.edu.tr/yayinlar/64032-modification-of-exciton-binding-energy-in-the-horizontal-bridgman-stockbarger}
}