Temperature Dependence of Magnetoresistance and Hall Effect for Ho Doped n-Type InSe
Özet
Magnetoresistance and Hall effect measurements were carried out for Ho doped n-InSe (n-InSe:Ho) sample in the temperature range 10-340 K, in which the sample exhibits transverse magnetoresistance (MJ⊥B) and longitudinal magnetoresistance (MJ//B) effect. The fit to a temperature power law T-βgives MJ⊥B ∝T-1.07and MJ//B ∝T-1.11 in the range 10-340 K for n-InSe:Ho. The transverse magnetoresistance coefficient of InSe:Ho in the temperature range 10-340 K is much greater than that of the reference n-InSe sample. As the temperature increases, the carrier concentration in the n-InSe:Ho sample increases between 10-340 K. Impurity energy levels calculated from In(p/T3/2) vs 103/T plot for n-InSe:Ho in the range 10-40 K, 40-240 K and 260-340 K are Ec-69 meV, Ec-264 meV and Ec-568 meV, respectively. The electron Hall mobility of the n-InSe:Ho sample decreases, as μH ∝ T-2.35 for 140-340 K. The Hall mobility and the carrier concentration of the n-InSe:Ho sample increase with increasing temperature in the range 10-340 K.
Atıf için künye
Gürbulak, B., Yıldırım, M., Ates, A., Dogan, S., Coskun, C., & Yogurtcu, Y. (2000). Temperature Dependence of Magnetoresistance and Hall Effect for Ho Doped n-Type InSe. PHYSICA SCRIPTA, 62(1), 92–96. https://doi.org/10.1238/physica.regular.062a00092
BibTeX
@article{gurbulak2000-64022,
author = {Gürbulak, Bekir and Yıldırım, Muhammet and Ates, A and Dogan, S and Coskun, C and Yogurtcu, YK},
title = {Temperature Dependence of Magnetoresistance and Hall Effect for Ho Doped n-Type InSe},
journal = {PHYSICA SCRIPTA},
year = {2000},
volume = {62},
number = {1},
pages = {92--96},
issn = {0031-8949},
doi = {10.1238/physica.regular.062a00092},
url = {https://akademik.atauni.edu.tr/yayinlar/64022-temperature-dependence-of-magnetoresistance-and-hall-effect-for-ho-doped-n-type}
}