Convertibility of conductivity type in reactively sputtered ZnO thin films
Özet
Possible negative-U behavior of the V-O donor may explain rather unusual free carrier properties in as-sputtered ZnO thin films grown at extremely Zn-rich conditions. V-O can act as a source of free electron concentration at sample temperatures above 210 K. Below this temperature it changes its charge state to an inactive neutral charge state where it cannot act as a donor because of a thermal barrier with a threshold temperature of 170-210 K. The thermal barrier for an electron to go to neutral charge state from positive charge state is approximately 162 meV. Material can be converted to p-type by annealing V-O centers. O-rich growth conditions with low [V-O] may result in p-type conductivity.
Atıf için künye
Tüzemen, S., Dogan, S., ATEŞ, A., Yıldırım, M., XİONG, G., WİLKİNSON, J., & WİLLİAMS, R. (2003). Convertibility of conductivity type in reactively sputtered ZnO thin films. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 195(1), 165–170. https://doi.org/10.1002/pssa.200306290
BibTeX
@article{tuzemen2003-64014,
author = {Tüzemen, Sebahattin and Dogan, Seydi and ATEŞ, Azman and Yıldırım, Muhammet and XİONG, GANG and WİLKİNSON, JOHN and WİLLİAMS, RT},
title = {Convertibility of conductivity type in reactively sputtered ZnO thin films},
journal = {PHYSICA STATUS SOLIDI A-APPLIED RESEARCH},
year = {2003},
volume = {195},
number = {1},
pages = {165--170},
issn = {0031-8965},
doi = {10.1002/pssa.200306290},
url = {https://akademik.atauni.edu.tr/yayinlar/64014-convertibility-of-conductivity-type-in-reactively-sputtered-zno-thin-films}
}