Absorption measurements in InSe : Ho single crystal under an electric field
Özet
InSe:Ho single crystal was grown by Bridgman-Stockberger method. Electric field effects on the absorption measurements have been investigated as a function of temperature in InSe:Ho single crystal. The absorption edge shifted towards longer wavelengths and a decrease of intensity in absorption spectra occurred under an electric field of 7.5 kV/cm. Using absorption measurements, steepness parameter and Urbach energy were calculated under electric field. Applied electric field caused an increase in the Urbach energy. At 10 K and 320 K, the first exciton energies were calculated as 1.322 and 1.301 eV for zero voltage and 1.245 and 1.232 eV for applied electric field, respectively.
Atıf için künye
ATEŞ, A., Gürbulak, B., Yıldırım, M., & Tüzemen, S. (2004). Absorption measurements in InSe : Ho single crystal under an electric field. CZECHOSLOVAK JOURNAL OF PHYSICS, 54(3), 377–385. https://doi.org/10.1023/b%3Acjop.0000018134.99750.18
BibTeX
@article{ates2004-64006,
author = {ATEŞ, Azman and Gürbulak, Bekir and Yıldırım, Muhammet and Tüzemen, Sebahattin},
title = {Absorption measurements in InSe : Ho single crystal under an electric field},
journal = {CZECHOSLOVAK JOURNAL OF PHYSICS},
year = {2004},
volume = {54},
number = {3},
pages = {377--385},
issn = {0011-4626},
doi = {10.1023/b:cjop.0000018134.99750.18},
url = {https://akademik.atauni.edu.tr/yayinlar/64006-absorption-measurements-in-inse-ho-single-crystal-under-an-electric-field}
}