Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics

Fritah, A.; Saadoune, A.; Dehimi, L.; Abay, Bahattin

doi:10.1080/14786435.2016.1185184

Makale Tam Makale Uluslararası 2016

Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics

A. Fritah, A. Saadoune, L. Dehimi, Bahattin Abay

PHILOSOPHICAL MAGAZINE Cilt 96 · Sayı 19 · ss. 2009–2026 · 02.07.2016

DOI ile aç

Anahtar kelimeler

HEIGHT CONTACTS SCHOTTKY DIODES Silicon CAPACITANCE-VOLTAGE CHARACTERISTICS BARRIER INHOMOGENEITIES GAAS CURRENT-TRANSPORT n-InP I-V-T and C-V-T characteristics simulation-Silvaco transport mechanism interface states and traps WIDE TEMPERATURE-RANGE TRAPS

Atıf için künye

Fritah, A., Saadoune, A., Dehimi, L., & Abay, B. (2016). Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics. PHILOSOPHICAL MAGAZINE, 96(19), 2009–2026. https://doi.org/10.1080/14786435.2016.1185184

BibTeX

@article{fritah2016-63914,
  author = {Fritah, A. and Saadoune, A. and Dehimi, L. and Abay, Bahattin},
  title = {Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics},
  journal = {PHILOSOPHICAL MAGAZINE},
  year = {2016},
  volume = {96},
  number = {19},
  pages = {2009--2026},
  issn = {1478-6435},
  doi = {10.1080/14786435.2016.1185184},
  url = {https://akademik.atauni.edu.tr/yayinlar/63914-investigation-on-the-non-ideal-behaviour-of-aun-inp-schottky-diodes-by-the}
}