Electrothermal investigation of the switching effect in p-type TlInSe2, TlInTe2, and TlGaTe2, chain chalcogenide semiconductors
Özet
Large p-type TlInSe2, TlInTe2, and TlGaTe2 single crystals have been grown by the Bridgman-Stockbarger method, starting from stoichiometric melts. The first observations of the switching process in p-type TlGaTe2 single crystal are reported. Current-voltage (I-V) characteristics of symmetrical In/p-TlInSe2/In, In/p-TlInTe2/In, and In/p-TlGaTe2/In structures exhibit two distinct regions: an ohmic region at low current densities and nonlinear regions (S-shape) having negative differential resistance (NDR) at moderate and higher current densities. An electrothermal model was used to explain the nonlinear behavior. The nonlinear behavior of the I-V curves was studied at different ambient temperatures in the 100-340K region; the sample temperature and the threshold voltage of the NDR region were examined as a function of the current density and the ambient temperature, respectively. The electrothermal model is a satisfactory explanation.
Anahtar kelimeler
Atıf için künye
Abay, B., Gürbulak, B., Yıldırım, M., Efeoğlu, H., Tüzemen, S., & YOĞURTÇU, Y. K. (1996). Electrothermal investigation of the switching effect in p-type TlInSe2, TlInTe2, and TlGaTe2, chain chalcogenide semiconductors. JOURNAL OF ELECTRONIC MATERIALS, 25(7), 1054–1059. https://doi.org/10.1007/bf02659902
BibTeX
@article{abay1996-63904,
author = {Abay, Bahattin and Gürbulak, Bekir and Yıldırım, Muhammet and Efeoğlu, Hasan and Tüzemen, Sebahattin and YOĞURTÇU, Yahya Kemal},
title = {Electrothermal investigation of the switching effect in p-type TlInSe2, TlInTe2, and TlGaTe2, chain chalcogenide semiconductors},
journal = {JOURNAL OF ELECTRONIC MATERIALS},
year = {1996},
volume = {25},
number = {7},
pages = {1054--1059},
issn = {0361-5235},
doi = {10.1007/bf02659902},
url = {https://akademik.atauni.edu.tr/yayinlar/63904-electrothermal-investigation-of-the-switching-effect-in-p-type-tlinse2-tlinte2}
}