Low-temperature photoluminescence of n-InSe layer semiconductor crystals

Abay, Bahattin; Efeoğlu, Hasan; Yoǧurtçu, Y.K.

doi:10.1016/s0025-5408(98)00112-3

Makale Tam Makale Uluslararası 1998

Low-temperature photoluminescence of n-InSe layer semiconductor crystals

Bahattin Abay, Hasan Efeoğlu, Y.K. Yoǧurtçu

Materials Research Bulletin Cilt 33 · Sayı 9 · ss. 1401–1410 · 01.01.1998

DOI ile aç

Anahtar kelimeler

DEFECTS ABSORPTION Crystal growth LUMINESCENCE DEPENDENCE SINGLE-CRYSTALS indium selenide TRANSITIONS layered compounds LEVEL-TRANSIENT SPECTROSCOPY QUANTUM-WELLS EXCITON GALLIUM

Atıf için künye

Abay, B., Efeoğlu, H., & Yoǧurtçu, Y. (1998). Low-temperature photoluminescence of n-InSe layer semiconductor crystals. Materials Research Bulletin, 33(9), 1401–1410. https://doi.org/10.1016/s0025-5408%2898%2900112-3

BibTeX

@article{abay1998-63903,
  author = {Abay, Bahattin and Efeoğlu, Hasan and Yoǧurtçu, Y.K.},
  title = {Low-temperature photoluminescence of n-InSe layer semiconductor crystals},
  journal = {Materials Research Bulletin},
  year = {1998},
  volume = {33},
  number = {9},
  pages = {1401--1410},
  issn = {0025-5408},
  doi = {10.1016/s0025-5408(98)00112-3},
  url = {https://akademik.atauni.edu.tr/yayinlar/63903-low-temperature-photoluminescence-of-n-inse-layer-semiconductor-crystals}
}