Low-temperature visible photoluminescence spectra of Tl2GaInSe4 layered crystals
Özet
The photoluminescence (PL) spectra of Tl2GaInSe4 layered single crystals has been investigated in the 10-95 K temperature, 0.04-3.98 W cm(-2) excitation laser intensity and 1.75-2.07 eV energy ranges. We have observed an emission band located at 1.912 eV (648 nm) at 10 K for an excitation intensity of 1.40 W cm(-2). The band had a half-width of 0.105 eV and an asymmetric Gaussian line shape. It has been found to red-shift with increasing temperature or decreasing excitation intensity. To explain the observed PL behaviour, we propose that the emission is due to the radiative recombination of a donor-acceptor pair (DAP) with an electron occupying a donor level located at 0.355 eV below the conduction band and a hole occupying an acceptor level located at 0.036 eV above the valance band. The blue-shift of the peak energy and the sub-linear increase of the band intensity for the observed emission band with increasing excitation intensity is explained using the in-homogeneously spaced DAP recombination model.
Atıf için künye
Abay, B., Efeoğlu, H., YOĞURTÇU, Y. K., & ALİEVA, M. (2001). Low-temperature visible photoluminescence spectra of Tl2GaInSe4 layered crystals. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 16(9), 745–749. https://doi.org/10.1088/0268-1242/16/9/302
BibTeX
@article{abay2001-63899,
author = {Abay, Bahattin and Efeoğlu, Hasan and YOĞURTÇU, YAHYA KEMAL and ALİEVA, M},
title = {Low-temperature visible photoluminescence spectra of Tl2GaInSe4 layered crystals},
journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
year = {2001},
volume = {16},
number = {9},
pages = {745--749},
issn = {0268-1242},
doi = {10.1088/0268-1242/16/9/302},
url = {https://akademik.atauni.edu.tr/yayinlar/63899-low-temperature-visible-photoluminescence-spectra-of-tl2gainse4-layered-crystals}
}