Temperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes
Özet
The current-voltage ( I-V) characteristics of Ti/p-InP Schottky diodes have been measured in a wide temperature range with a temperature step of 20 K. An experimental barrier height ( BH) Phi(ap) value of about 0.85 eV was obtained for the Ti/p-InP Schottky diode at 300 K. A decrease in the experimental BH Phi(ap) and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with the Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal semiconductor interface. (Phi) over bar (b) and A* as 1.01 eV, and 138 A cm(-2) K-2, respectively, have been calculated from a modified ln( I-0/T-2) - q(2)sigma(2)(s)/2k(2)T(2) versus 1/T plot. This BH value is in close agreement with the values of 0.99 eV obtained from the Phi(ap) versus 1/T and ln( I-0/T-2) versus 1/nT plots.
Atıf için künye
Asubay, S., GÜLLÜ, O., Abay, B., Turut, A., & Yilmaz, A. (2008). Temperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23(3). https://doi.org/10.1088/0268-1242/23/3/035006
BibTeX
@article{asubay2008-63893,
author = {Asubay, Sezai and GÜLLÜ, Omer and Abay, Bahattin and Turut, Abdulmecit and Yilmaz, Ali},
title = {Temperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes},
journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
year = {2008},
volume = {23},
number = {3},
issn = {0268-1242},
doi = {10.1088/0268-1242/23/3/035006},
url = {https://akademik.atauni.edu.tr/yayinlar/63893-temperature-dependent-behavior-of-tip-inpznau-schottky-barrier-diodes}
}