Electrical transport properties of p-GaTe grown by directional freezing method

Efeoğlu, Hasan; Karacalı, Tevhit; Abay, Bahattin; YOGURTÇU, Y.K.

doi:10.1088/0268-1242/19/3/043

Makale Tam Makale Uluslararası 2004

Electrical transport properties of p-GaTe grown by directional freezing method

Hasan Efeoğlu, Tevhit Karacalı, Bahattin Abay, Y.K. YOGURTÇU

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Cilt 19 · Sayı 3 · ss. 523–530 · 01.03.2004

DOI ile aç

Atıf için künye

Efeoğlu, H., Karacalı, T., Abay, B., & YOGURTÇU, Y. (2004). Electrical transport properties of p-GaTe grown by directional freezing method. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19(3), 523–530. https://doi.org/10.1088/0268-1242/19/3/043

BibTeX

@article{efeoglu2004-63883,
  author = {Efeoğlu, Hasan and Karacalı, Tevhit and Abay, Bahattin and YOGURTÇU, Y.K.},
  title = {Electrical transport properties of p-GaTe grown by directional freezing method},
  journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  year = {2004},
  volume = {19},
  number = {3},
  pages = {523--530},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/19/3/043},
  url = {https://akademik.atauni.edu.tr/yayinlar/63883-electrical-transport-properties-of-p-gate-grown-by-directional-freezing-method}
}