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P-Si(100)/InGaN Thin Film Structure and Investigation of Its Physical Properties: N2 Gas Flow Effect.

ERMAN ERDOĞAN, Mutlu Kundakçı

INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017 August 17-19, 2017 Konya-TURKEY 17.08.2017–19.08.2017 · 17.08.2017

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ERDOĞAN, E., & Kundakçı, M. (2017). P-Si(100)/InGaN Thin Film Structure and Investigation of Its Physical Properties: N2 Gas Flow Effect. INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017 August 17-19, 2017 Konya-TURKEY.

BibTeX
@inproceedings{erdogan2017-63745,
  author = {ERDOĞAN, ERMAN and Kundakçı, Mutlu},
  title = {P-Si(100)/InGaN Thin Film Structure and Investigation of Its Physical Properties: N2 Gas Flow Effect.},
  booktitle = {INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017 August 17-19, 2017 Konya-TURKEY},
  year = {2017},
  url = {https://akademik.atauni.edu.tr/yayinlar/63745-p-si100ingan-thin-film-structure-and-investigation-of-its-physical-properties-n2}
}