Bildiri
Özet Bildiri
Uluslararası
2017
P-Si(100)/InGaN Thin Film Structure and Investigation of Its Physical Properties: N2 Gas Flow Effect.
INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017 August 17-19, 2017 Konya-TURKEY
17.08.2017–19.08.2017 · 17.08.2017
Atıf için künye
ERDOĞAN, E., & Kundakçı, M. (2017). P-Si(100)/InGaN Thin Film Structure and Investigation of Its Physical Properties: N2 Gas Flow Effect. INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017 August 17-19, 2017 Konya-TURKEY.
BibTeX
@inproceedings{erdogan2017-63745,
author = {ERDOĞAN, ERMAN and Kundakçı, Mutlu},
title = {P-Si(100)/InGaN Thin Film Structure and Investigation of Its Physical Properties: N2 Gas Flow Effect.},
booktitle = {INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017 August 17-19, 2017 Konya-TURKEY},
year = {2017},
url = {https://akademik.atauni.edu.tr/yayinlar/63745-p-si100ingan-thin-film-structure-and-investigation-of-its-physical-properties-n2}
}