Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect

ERDOĞAN, ERMAN; Kundakçı, Mutlu; Kasapoğlu, Ahmet Emre; GÜR, Emre

doi:10.1063/1.5026007

Makale Tam Makale Uluslararası 2018

Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect

ERMAN ERDOĞAN, Mutlu Kundakçı, Ahmet Emre Kasapoğlu, Emre GÜR

American Journal Of Physics 01.08.2018

DOI ile aç

Atıf için künye

ERDOĞAN, E., Kundakçı, M., Kasapoğlu, A. E., & GÜR, E. (2018). Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect. American Journal Of Physics. https://doi.org/10.1063/1.5026007

BibTeX

@article{erdogan2018-63684,
  author = {ERDOĞAN, ERMAN and Kundakçı, Mutlu and Kasapoğlu, Ahmet Emre and GÜR, Emre},
  title = {Growth and characterization of InGaN thin films on Si (111) substrate by RF magnetron sputtering: N2 gas flow effect},
  journal = {American Journal Of Physics},
  year = {2018},
  issn = {0002-9505},
  doi = {10.1063/1.5026007},
  url = {https://akademik.atauni.edu.tr/yayinlar/63684-growth-and-characterization-of-ingan-thin-films-on-si-111-substrate-by-rf}
}