The annealing effect on structural, optical and photoelectrical properties of CuInS2/In2S3 films
Özet
Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS2/In2S3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 degrees C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current-Voltage (I-V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm(2) light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300-470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS2/In2S3 films. (C) 2011 Elsevier B.V. All rights reserved.
Atıf için künye
Kundakçı, M. (2011). The annealing effect on structural, optical and photoelectrical properties of CuInS2/In2S3 films. PHYSICA B-CONDENSED MATTER, 406, 2953–2961. https://doi.org/10.1016/j.physb.2011.04.027
BibTeX
@article{kundakci2011-63665,
author = {Kundakçı, Mutlu},
title = {The annealing effect on structural, optical and photoelectrical properties of CuInS2/In2S3 films},
journal = {PHYSICA B-CONDENSED MATTER},
year = {2011},
volume = {406},
pages = {2953--2961},
issn = {0921-4526},
doi = {10.1016/j.physb.2011.04.027},
url = {https://akademik.atauni.edu.tr/yayinlar/63665-the-annealing-effect-on-structural-optical-and-photoelectrical-properties-of}
}