p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect

ERDOĞAN, ERMAN; Kundakçı, Mutlu; Kasapoğlu, Ahmet Emre; GÜR, EMRE

doi:10.1016/j.matpr.2019.06.675

Makale Tam Makale Uluslararası 2019

p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect

ERMAN ERDOĞAN, Mutlu Kundakçı, Ahmet Emre Kasapoğlu, EMRE GÜR

Materials Today: Proceedings Cilt 18 · ss. 1868–1874 · 01.01.2019

DOI ile aç

Atıf için künye

ERDOĞAN, E., Kundakçı, M., Kasapoğlu, A. E., & GÜR, E. (2019). p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect. Materials Today: Proceedings, 18, 1868–1874. https://doi.org/10.1016/j.matpr.2019.06.675

BibTeX

@article{erdogan2019-63648,
  author = {ERDOĞAN, ERMAN and Kundakçı, Mutlu and Kasapoğlu, Ahmet Emre and GÜR, EMRE},
  title = {p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect},
  journal = {Materials Today: Proceedings},
  year = {2019},
  volume = {18},
  pages = {1868--1874},
  issn = {2214-7853},
  doi = {10.1016/j.matpr.2019.06.675},
  url = {https://akademik.atauni.edu.tr/yayinlar/63648-p-si100ingan-thin-film-structure-and-investigation-of-its-physical-properties-n2}
}