gamma-Ray Mass Attenuation Coefficients of Some Semiconductor Crystals at Liquid Nitrogen Temperature

In this study, the change according to the liquid nitrogen temperature (- 196 degrees C) of gamma-ray mass attenuation coefficients (mu/rho) for TlGaSe2, TlInGaSe2, Tl0.7In0.3Se2, Ga0.9In0.1Se, GaTe0.4Se0.6, GaTe0.8Se0.2, GaSe, GaSe:Sn, GaTe, and GaTe:Cd semiconductor crystals has been investigated by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. TlGaSe2, TlInGaSe2, Tl0.7In0.3Se2, Ga0.9In0.1Se, GaTe0.4Se0.6, GaTe0.8Se0.2, GaSe, GaSe:Sn, GaTe, and GaTe:Cd semiconductors were grown by the Bridgman-Stockbarger method in our current crystal growth laboratory. These crystals have been annealing at a temperature of 300 degrees C for 30 min. Then, these semiconductors were kept in liquid nitrogen for 3 min. gamma-ray mass attenuation coefficients of semiconductors were measured first at room temperature (25 degrees C) after annealing at (300 degrees C) and finally discarded into the liquid nitrogen (- 196 degrees C). gamma-rays of 241Am were detected by using a high-resolution Si(Li) detector and energy-dispersive X-ray fluorescence spectrometer (EDXRFS). The data were collected into 4096 channels of a multichannel analyzer and the spectra were collected for 1800s. Also, the experimental results have been compared with WinXCom and FFAST theoretical results for 25 degrees C.