Effect of voltages on gamma-Ray linear attenuation coefficients for some semiconductors
Özet
In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of gamma-ray linear attenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors have been measured by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. Gamma-rays of Am-241 were detected by using a high-resolution Si(Li) detector and, energy dispersive X-ray fluorescence spectrometer (EDXRFS). GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTeo(0.8)Se(0.2) semiconductors were grown by the Bridgman-Stockbarger method. There are no cracks or voids on the surface of ingots. Samples were cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even before using mechanical treatment. Results are presented and discussed in this study.
Atıf için künye
Akça, B., Gürbulak, B., & Erzeneoğlu, S. Z. (2021). Effect of voltages on gamma-Ray linear attenuation coefficients for some semiconductors. RADIATION PHYSICS AND CHEMISTRY, 179. https://doi.org/10.1016/j.radphyschem.2020.109208
BibTeX
@article{akca2021-63431,
author = {Akça, Burcu and Gürbulak, Bekir and Erzeneoğlu, Salih Zeki},
title = {Effect of voltages on gamma-Ray linear attenuation coefficients for some semiconductors},
journal = {RADIATION PHYSICS AND CHEMISTRY},
year = {2021},
volume = {179},
issn = {0969-806X},
doi = {10.1016/j.radphyschem.2020.109208},
url = {https://akademik.atauni.edu.tr/yayinlar/63431-effect-of-voltages-on-gamma-ray-linear-attenuation-coefficients-for-some}
}