Mass attenuation coefficients, effective atomic numbers and electron densities of undoped and differently doped GaAs and InP crystals
Özet
The total mass attenuation coefficients (mu/rho), for GaAs, GaAs (semi-insulating; S-I) GaAs:Si (N+), GaAs:Zn, InP:Fe, InP:Fe-As, InP:S and InP:Zn crystals were measured at 22.1, 25.0, 59.5 and 88.0 keV photon energies. The samples were irradiated with Cd-109 and Am-241 radioactive point sources using transmission arrangement. The X- and gamma-rays were counted by a Si (Li) detector with resolution of 160 eV at 5.9 keV. Total atomic and electronic cross-sections (a, and a,), effective atomic numbers (Z(eff)) and electron densities (N-el) were determined using the obtained mu/rho values for the investigated crystals. (C) 2009 Elsevier Ltd. All rights reserved.
Atıf için künye
Demir, L., & HAN, İ. (2009). Mass attenuation coefficients, effective atomic numbers and electron densities of undoped and differently doped GaAs and InP crystals. ANNALS OF NUCLEAR ENERGY, 36(7), 869–873. https://doi.org/10.1016/j.anucene.2009.03.015
BibTeX
@article{demir2009-63195,
author = {Demir, Lütfü and HAN, İBRAHİM},
title = {Mass attenuation coefficients, effective atomic numbers and electron densities of undoped and differently doped GaAs and InP crystals},
journal = {ANNALS OF NUCLEAR ENERGY},
year = {2009},
volume = {36},
number = {7},
pages = {869--873},
issn = {0306-4549},
doi = {10.1016/j.anucene.2009.03.015},
url = {https://akademik.atauni.edu.tr/yayinlar/63195-mass-attenuation-coefficients-effective-atomic-numbers-and-electron-densities-of}
}