Schottky barrier engineering in metal/semiconductor structures for high thermal stability

In this study, Co/eosin-y/p-Si/Al and Co/eosin-y/n-Si/Al heterojunctions with Schottky barrier were produced and electrical characteristics were investigated in the temperature range 100-460 K at intervals of 20 K. For each device, the barrier heights (phi (b)), ideality factors (n) and series resistance (Rs) values were calculated using different methods from the current-voltage curves. It was observed that the ideality factor and series resistance increased with decreasing temperature, while the height of the barrier decreased. One of the reasons for this change in parameters is the inhomogeneity of the Schottky barrier. The Rs values were found with the help of Cheung functions and Norde functions. The contact parameters obtained from the Cheung functions and those obtained from the Norde function were compared. It was observed that the barrier heights obtained from these methods increased linearly with increasing temperature values. The variation of temperature-dependent interfacial state density versus interfacial state energy was shown. The density of the interfacial state decreased, with increasing interfacial state energy at each temperature value. These characteristics indicate that Co/eosin-y/p-Si/Al and Co/eosin-y/n-Si/Al devices are good candidates for rectifying and thermal sensing applications.