Extraction of electronic parameters of Schottky diode based on an organic Orcein
Özet
An Au/Orcein/p-Si/Al device was fabricated and the current-voltage measurements of the devices showed diode characteristics. Then the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device were investigated at room temperature. Some junction parameters of the device such as ideality factor, barrier height, and series resistance were determined from I-V and C-V characteristics. The ideality factor of 2.48 and barrier height of 0.70 eV were calculated using I-V characteristics. It has been seen that the Orcein layer increases the effective barrier height of the structure since this layer creates the physical barrier between the Au and the p-Si. The interface state density N(ss) were determined from the I-V plots. The capacitance measurements were determined as a function of voltage and frequency. It was seen that the values of capacitance have modified with bias and frequency. (C) 2010 Elsevier B.V. All rights reserved.
Anahtar kelimeler
Atıf için künye
Aydoğan, Ş., İncekara, Ü., DENIZ, A. R., & Turut, A. (2010). Extraction of electronic parameters of Schottky diode based on an organic Orcein. MICROELECTRONIC ENGINEERING, 87(12), 2525–2530. https://doi.org/10.1016/j.mee.2010.06.004
BibTeX
@article{aydogan2010-61596,
author = {Aydoğan, Şakir and İncekara, Ümit and DENIZ, A. R. and Turut, Abdulmecit},
title = {Extraction of electronic parameters of Schottky diode based on an organic Orcein},
journal = {MICROELECTRONIC ENGINEERING},
year = {2010},
volume = {87},
number = {12},
pages = {2525--2530},
issn = {0167-9317},
doi = {10.1016/j.mee.2010.06.004},
url = {https://akademik.atauni.edu.tr/yayinlar/61596-extraction-of-electronic-parameters-of-schottky-diode-based-on-an-organic-orcein}
}