Influence of illumination intensity on electrical characteristics of Eosin y dye-based hybrid photodiode: comparative study

We reported the optoelectronic performance of organic/inorganic hybrid junction photodiode based on Eosin y/silicon (Si). For this purpose, we fabricated Eosin y/n-Si and Eosin y/p-Si structures and demonstrated that both devices exhibited strong photodiode characteristics to the increasing light power depending on current-voltage (I-V) measurements. Furthermore, the XRD and SEM analyses of Eosin y film were performed to analyze structural and topographical features of the film. The electrical measurements of Eosin y/n-Si and Eosin y/p-Si photodiodes were carried out in both dark and under various illumination intensities in the range of 100-400 mW/cm(2). The main device parameters, such as ideality factor, barrier height, and responsivities of both devices, were determined from the I-V characteristics. The obtained photocurrent values in reverse biases are higher than the dark current at the same reverse bias for both Eosin y/n-Si and Eosin y/p-Si photodiodes. So, this confirmed that light produces photocurrent due to the formation of electron-hole pairs as a result of light absorption in the Eosin y film. Moreover, the C-V measurements were performed on both photodiodes to characterize capacitive performance of the Eosin y films. The fabricated photodiodes based on Eosin y thin films present great promise for future optoelectronic device applications.