Calculation of characteristics parameters of Au/methyl green/n-Si/Ag diodes from the current-voltage measurements

In this study, methyl-green (MG) organic dye layer was formed on the front side of a n-Si semiconductor via low-cost drop coating method and twenty (20) Au/MG/n-Si/Ag diodes have been identically fabricated. The fundamental diode parameters such as barrier height (BH, null b thorn , ideality factor (IF, n) and series resistance (R-s) were determined from the current-voltage (I-V) measurements by using ln(I)-V characteristics, Cheung's functions and modified Norde's functions at room temperature. The values of BH and IF calculated from ln(I)-V were varied from 0.744 to 0.862 eV and from 1.10 to 1.64 for the 20 Au/MG/n-Si/Ag diodes, respectively. The experimental BH and IF distributions calculated from the ln(I)-V characteristics and Cheung's functions were fitted by a Gaussian distribution function. The statistical analysis yielded a mean IF value of 1.26 with standard deviation (sigma) of 0.173 and a mean BH value of 0.817 eV with sigma of 0.031 eV from the ln (I)-V characteristics, respectively. It was seen that there is an agreement between the BH values calculated from ln(I)-V and other two methods. The Rs obtained from Norde's function were compared with those from Cheung's functions.