DNA-based organic-on-inorganic devices: Barrier enhancement and temperature issues
Özet
Electrical measurements have been reported sandwich device fabricated from DNA molecular film located between Al and p-type InP inorganic semiconductor. We have observed that DNA-based this structure shows an excellent rectifying behavior, and that the DNA film increases the effective barrier height by influencing the space charge region of InP. We have also evaluated electrical characteristics of the DNA-based device in a wide temperature range. (C) 2008 Elsevier B.V. All rights reserved.
Atıf için künye
GULLU, O., CANKAYA, M., Barış, Ö., & TURUT, A. (2008). DNA-based organic-on-inorganic devices: Barrier enhancement and temperature issues. MICROELECTRONIC ENGINEERING, 85(11), 2250–2255. https://doi.org/10.1016/j.mee.2008.07.003
BibTeX
@article{gullu2008-58261,
author = {GULLU, Omer and CANKAYA, Murat and Barış, Özlem and TURUT, Abdulmecit},
title = {DNA-based organic-on-inorganic devices: Barrier enhancement and temperature issues},
journal = {MICROELECTRONIC ENGINEERING},
year = {2008},
volume = {85},
number = {11},
pages = {2250--2255},
issn = {0167-9317},
doi = {10.1016/j.mee.2008.07.003},
url = {https://akademik.atauni.edu.tr/yayinlar/58261-dna-based-organic-on-inorganic-devices-barrier-enhancement-and-temperature}
}