DNA-based organic-on-inorganic semiconductor Schottky structures
Özet
A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 x 10(10) Omega cm representing a p-type conductivity. (C) 2008 Elsevier B.V. All rights reserved.
Anahtar kelimeler
Atıf için künye
GULLU, O., CANKAYA, M., Barış, Ö., BIBER, M., Özdemir, H., GÜLLÜCE, M., & TURUT, A. (2008). DNA-based organic-on-inorganic semiconductor Schottky structures. APPLIED SURFACE SCIENCE, 254(16), 5175–5180. https://doi.org/10.1016/j.apsusc.2008.02.019
BibTeX
@article{gullu2008-58250,
author = {GULLU, O. and CANKAYA, M. and Barış, Özlem and BIBER, Mehmet and Özdemir, Hasan and GÜLLÜCE, Medine and TURUT, Abdulmecit},
title = {DNA-based organic-on-inorganic semiconductor Schottky structures},
journal = {APPLIED SURFACE SCIENCE},
year = {2008},
volume = {254},
number = {16},
pages = {5175--5180},
issn = {0169-4332},
doi = {10.1016/j.apsusc.2008.02.019},
url = {https://akademik.atauni.edu.tr/yayinlar/58250-dna-based-organic-on-inorganic-semiconductor-schottky-structures}
}