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Makale Tam Makale Uluslararası 2008

DNA-based organic-on-inorganic semiconductor Schottky structures

O. GULLU, M. CANKAYA, Özlem Barış, Mehmet BIBER, Hasan Özdemir, Medine GÜLLÜCE, Abdulmecit TURUT

APPLIED SURFACE SCIENCE Cilt 254 · Sayı 16 · ss. 5175–5180 · 15.06.2008
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Özet

A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 x 10(10) Omega cm representing a p-type conductivity. (C) 2008 Elsevier B.V. All rights reserved.

Anahtar kelimeler

SERIES SURFACES DNA SI Current-voltage CONTACTS Schottky barrier BARRIER HEIGHT organic-inorganic contact organic semiconductor ELECTRICAL-TRANSPORT INHOMOGENEITIES DIODES CHARGE

Atıf için künye

GULLU, O., CANKAYA, M., Barış, Ö., BIBER, M., Özdemir, H., GÜLLÜCE, M., & TURUT, A. (2008). DNA-based organic-on-inorganic semiconductor Schottky structures. APPLIED SURFACE SCIENCE, 254(16), 5175–5180. https://doi.org/10.1016/j.apsusc.2008.02.019

BibTeX
@article{gullu2008-58250,
  author = {GULLU, O. and CANKAYA, M. and Barış, Özlem and BIBER, Mehmet and Özdemir, Hasan and GÜLLÜCE, Medine and TURUT, Abdulmecit},
  title = {DNA-based organic-on-inorganic semiconductor Schottky structures},
  journal = {APPLIED SURFACE SCIENCE},
  year = {2008},
  volume = {254},
  number = {16},
  pages = {5175--5180},
  issn = {0169-4332},
  doi = {10.1016/j.apsusc.2008.02.019},
  url = {https://akademik.atauni.edu.tr/yayinlar/58250-dna-based-organic-on-inorganic-semiconductor-schottky-structures}
}