Differential inelastic scattering cross-section of silicon and gallium arsenide semiconductor crystals
Özet
Because of the extensive usage of silicon and gallium arsenide semiconductor crystals, the differential inelastic scattering cross-sections at 59.5 keV have been measured for various scattering angles changing from 120 to 150 degrees by using an energy dispersive X-ray fluorescence spectrometer. The spectrometer includes an Am-241 radio isotopes as photon source and a Si(Li) detector. Experimental results of differential inelastic scattering cross-sections compared with theoretical results. We found a good agreement between experimental and theoretical values in the standard uncertainties. To our best of knowledge, these results are first data in the differential inelastic scattering cross-sections of silicon and gallium arsenide crystals.
Anahtar kelimeler
Atıf için künye
Kabil, H., Şakar, E., Meral, A., ŞAHİN, M., & Gürol, A. (2016). Differential inelastic scattering cross-section of silicon and gallium arsenide semiconductor crystals. ASIAN JOURNAL OF CHEMISTRY, 28(6), 1389–1392. https://doi.org/10.14233/ajchem.2016.19823
BibTeX
@article{kabil2016-54591,
author = {Kabil, H. and Şakar, Erdem and Meral, A. and ŞAHİN, MEHMET and Gürol, Ali},
title = {Differential inelastic scattering cross-section of silicon and gallium arsenide semiconductor crystals},
journal = {ASIAN JOURNAL OF CHEMISTRY},
year = {2016},
volume = {28},
number = {6},
pages = {1389--1392},
issn = {0970-7077},
doi = {10.14233/ajchem.2016.19823},
url = {https://akademik.atauni.edu.tr/yayinlar/54591-differential-inelastic-scattering-cross-section-of-silicon-and-gallium-arsenide}
}