Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Altuntaş, İsmail; Kocak, Merve Nur; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, Ahmet Emre; Horoz, Sabit; Gür, Emre; Demir, İlkay

doi:10.1016/j.mssp.2021.105733

Makale Tam Makale Uluslararası 2021

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

İsmail Altuntaş, Merve Nur Kocak, Gamze Yolcu, Hasan Feyzi Budak, Ahmet Emre Kasapoğlu, Sabit Horoz, Emre Gür, İlkay Demir

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Cilt 127 · 01.06.2021

DOI ile aç

Özet

In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were investigated by secondary ion mass spectroscopy (SIMS). It was observed that O and Si concentration change with growth temperature of epilayers as well as the interface significantly. HRXRD (high-resolution x-ray diffraction) analyses showed that the highest growth temperature results with the lowest full width at half maximum (FWHM) value for both ? scans. Scanning electron microscope (SEM) and atomic force microscopy (AFM) analyses indicated that relatively low growth temperature grown samples gave rise to 2D-like growth mode with openings while increased growth temperature resulted in change the growth mode to a columnar mode with increasing V-shape pits because of the increasing diffusion coefficient of O impurities and Si atoms in AlN epilayers.

Anahtar kelimeler

THICKNESS MECHANISM FILM GaN PALE diffusion AlN MOVPE EPITAXIAL-GROWTH

Atıf için künye

Altuntaş, İ., Kocak, M. N., Yolcu, G., Budak, H. F., Kasapoğlu, A. E., Horoz, S., Gür, E., & Demir, İ. (2021). Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111). MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 127. https://doi.org/10.1016/j.mssp.2021.105733

BibTeX

@article{altuntas2021-341235,
  author = {Altuntaş, İsmail and Kocak, Merve Nur and Yolcu, Gamze and Budak, Hasan Feyzi and Kasapoğlu, Ahmet Emre and Horoz, Sabit and Gür, Emre and Demir, İlkay},
  title = {Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)},
  journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
  year = {2021},
  volume = {127},
  issn = {1369-8001},
  doi = {10.1016/j.mssp.2021.105733},
  url = {https://akademik.atauni.edu.tr/yayinlar/341235-influence-of-the-pale-growth-temperature-on-quality-of-movpe-grown-alnsi-111}
}