Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures
Özet
We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 degrees C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75nm are considered, the epilayer grown on the 25nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).
Atıf için künye
Demir, İ., Kasapoğlu, A. E., Budak, H. F., Gür, E., & Elagöz, S. (2020). Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 90(2). https://doi.org/10.1051/epjap/2020190216
BibTeX
@article{demir2020-341229,
author = {Demir, İlkay and Kasapoğlu, Ahmet Emre and Budak, Hasan Feyzi and Gür, Emre and Elagöz, Sezai},
title = {Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures},
journal = {EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS},
year = {2020},
volume = {90},
number = {2},
issn = {1286-0042},
doi = {10.1051/epjap/2020190216},
url = {https://akademik.atauni.edu.tr/yayinlar/341229-influences-of-thickness-and-temperature-of-low-temperature-gaas-buffer-layer-on}
}