Influence of Te and Se doping on ZnO films growth by SILAR method
Özet
The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.
Atıf için künye
Güney, H., & DUMAN, Ç. (2016). Influence of Te and Se doping on ZnO films growth by SILAR method. International Conference on Advances in Natural and Applied Sciences, Antalya, Turkey. https://doi.org/10.1063/1.4945948
BibTeX
@inproceedings{guney2016-334465,
author = {Güney, Harun and DUMAN, ÇAĞLAR},
title = {Influence of Te and Se doping on ZnO films growth by SILAR method},
booktitle = {International Conference on Advances in Natural and Applied Sciences},
address = {Antalya, Turkey},
year = {2016},
doi = {10.1063/1.4945948},
url = {https://akademik.atauni.edu.tr/yayinlar/334465-influence-of-te-and-se-doping-on-zno-films-growth-by-silar-method}
}