Numerical Simulation Of Graphene/N-Ws2/A-Si:H(İ)/P-Csi/Ag Hit Solar Cells

The discovery of new materials has led to advances in optoelectronic technology and has become

a major source of motivation for many researchers. This has enabled higher efficiency values to

be achieved in solar cells, which have a very important place in optoelectronic technology [1, 2].

Heterojunction with intrinsic thin layer (HIT) solar cells are one of the highest cell efficiency

among silicon-based solar cells. HIT solar cells can be produced in different configurations [3, 4].

In this study, graphene/n-WS2/a-Si:H(i)/p-cSi/Ag HIT solar cell was designed and some

important photovoltaic properties were analyzed by using AFORS-HET software (version 2.5).

Tungsten disulfide (WS2) is an important member of the transition metal dialcogenides (TMDCs)

class, which includes hexagonal structured, layered materials with molecular formula of XY2,

where X is transition metals such as Nb, W, and Mo, and Y is chalcogens such as Te, Se, and S [5,

6]. Recently, ultrathin WS2 has become one of the interesting materials in the investigation of solar

cell structures due to its superior electrical and optical features [7]. The most important aim of this

study is to find a suitable way to enhance the performance of n-type WS2/p-cSi heterojunction

solar cells through simulation. The parameters of both the Si and WS2 layers were optimized, and

a photovoltaic conversion efficiency value of 23.47% was obtained in the simulations. As a result,

it has been shown that the WS2 material and the designed structure can be used in solar cell

applications.