The effects of different doses of electron radiation on the electrical characteristics of ZnO interfacial Zn/n-Si junction

In this work, we have investigated the electrical characteristics of Zn/ZnO/n-Si/Au-Sb Schottky diodes before and after different doses (25 and 50 Gray) of electron-irradiation at room temperature. Initially, the ohmic contact has been made on n-Si semiconductor with Au-Sb alloy. After this process the ZnO thin film was grown on n-Si semiconductor by using RF magnetron sputtering system, and then the contact area is determined by sputtered Zn metal to surface of ZnO in DC sputtering system at about 10-6 Torr. The characteristic parameters of the junction such as ideality factor and barrier height values are calculated from I to V measurements and the carrier concentration, Fermi energy, diffusion potential, and barrier height values are calculated from reverse bias C-2-V measurements at various frequencies and room temperature. The I-V and C-V measurements of these diodes performed at room temperature and in dark. Experimental results showed that the values of the ideality factor increased and barrier height from forward-bias I-V measurements decreased and diffusion potential and the values of the barrier height obtained from reverse-bias C-V measurements decreased after electron-irradiation. However, changes in the characteristic parameters of the ZnO interfacial layer diode in 25 Gray of electron-irradiation were found to be less than those of the 50 Gray of electron-irradiation. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.