Si-Doped Fe2O3 Grown by DC- RF Magnetron Co-Sputtering

In this study, the structure of silicon iron oxide (Si:Fe2O3)

was grown using co-sputtering. The Si:Fe2O3 film was

grown on glass substrates at a pressure of 8.5 mTorr and a temperature of 450°C

for 35 minutes. Optical measurements were revealed that the band gap of the

structure ranged from 2,54 to 2.73 eV. The roughness values of the obtained

films were observed as Ra 3.08 nm and Sa 2.7 nm for Si:Fe2O3,

and Ra 1.88 nm and Sa 2.09 nm for Fe2O3, respectively. As

obtained from XPS data, the change in binding energy was observed to depend on

the electron exchange between silicon, iron and oxygen. In the iron-silicon

oxide structure, the energy increased slightly as a result of the chemical

environment. The Si4+ ion had a strong tendency to distribute itself

within the tetrahedral region of spinel-like structures. The behavior of the

structure was influenced by the stoichiometry of oxygen. The consistent results

from both XRD and SEM images indicated that the crystal grain sizes gradually

decreased as the silicon content increased.<o:p></o:p>

Keywords: Silicon iron oxide, Co-sputtering, Spinel-like structures, Thin film,

Semiconductor<o:p></o:p>