Impact of quantum confinement effects on monolayer MoS2 channel FinFETs

This study presents a semiclassical quantum-correction framework utilizing the density-gradient (DG) method within a drift-diffusion formalism (DD) to model electrostatics in ultra-thin MoS2 transistors. The device performance is captured under gate-length (LG) scaling and thickness-dependent quantum confinement (QC) by this semiclassical framework. As LG scales below 10 nm, short-channel effects (SCEs) dominate, manifesting as increased subthreshold swing (SS) and drain-induced barrier lowering (DIBL). At TCH= 0.65 nm, DG-induced charge-centroid displacement yields modest conduction band adjustments, resulting in minimal QC effects in transfer characteristics. Monolayer devices exhibit substantial quantum corrections, with SS and DIBL variations (2 mV dec-1 and 1 mV V-1, respectively) remaining within experimental uncertainty. This study fills the critical knowledge gap on QC effects in ultra-scaled 2D-FinFET (2DFIN) devices and provides a physics-based foundation for future low-power nanoelectronic platforms.