Harnessing Alcea biennis for sustainable and high-performance organic/Inorganic heterojunction photodetectors

Herein, we demonstrate self-assembled, highly stable, high-performance, and broadband response organic/inorganic hybrid photodetectors based on AB@Si devices formed by the integration of both n-type and p-type Si with Alcea biennis (AB) extract. Besides, recombination currents and traps were observed to be more effective in the AB@p-Si device. Both devices were found to exhibit remarkable photoresponse under illumination conditions in the white light as well as in UV and IR. The AB@n-Si device exhibited impressive performance metrics at -2.0 V, with the responsivity (R), detectivity (D), and external quantum efficiency (EQE) reaching 758 mA/W (at 365 nm), 2.42 × 10¹¹ Jones (at 590 nm), and 250% (at 365 nm), respectively. Under the same bias conditions, the AB@p-Si device exhibited enhanced performance, yielding a responsivity of 1384 mA/W, a detectivity of 4.66 × 10¹¹ Jones, and an EQE of 282%, all recorded at 590 nm. It was seen that the integration of AB with n-Si and p-Si holds promise for high-performance, very stable, low-cost organic/inorganic-based devices with different designs.