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Makale Tam Makale Uluslararası 2002

Anharmonicity in GaTe layered crystals

ATİLLA AYDINLI, NM Gasanly, A Uka, Hasan Efeoğlu

CRYSTAL RESEARCH AND TECHNOLOGY Cilt 37 · Sayı 12 · ss. 1303–1309 · 01.01.2002
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Özet

The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm(-1). Softening and broadening of the optical phonon lines are observed with increasing temperature. Comparison between the experimental data and theories of the shift of the phonon lines during heating of the crystal showed that the experimental dependencies can be explained by contributions from thermal expansion and lattice anharmonicity. Lattice anharmonicity is determined to be due to three-phonon processes.

Anahtar kelimeler

optical properties TEMPERATURE-DEPENDENCE Raman spectroscopy Semiconductors SPECTRA Chalcogenides RAMAN-SCATTERING OPTICAL PHONONS

Atıf için künye

AYDINLI, A., Gasanly, N., Uka, A., & Efeoğlu, H. (2002). Anharmonicity in GaTe layered crystals. CRYSTAL RESEARCH AND TECHNOLOGY, 37(12), 1303–1309. https://doi.org/10.1002/crat.200290006

BibTeX 
@article{aydinli2002-180886,
  author = {AYDINLI, ATİLLA and Gasanly, NM and Uka, A and Efeoğlu, Hasan},
  title = {Anharmonicity in GaTe layered crystals},
  journal = {CRYSTAL RESEARCH AND TECHNOLOGY},
  year = {2002},
  volume = {37},
  number = {12},
  pages = {1303--1309},
  issn = {0232-1300},
  doi = {10.1002/crat.200290006},
  url = {https://akademik.atauni.edu.tr/yayinlar/180886-anharmonicity-in-gate-layered-crystals}
}