Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K
Özet
In order to evaluate current conduction mechanism in the Au/n-GaAs Schottky barrier diode (SBD) some electrical parameters such as the zero-bias barrier height (BH) Phi(bo)(I-V) and ideality factor (n) were obtained from the forward bias current-voltage (I-V) characteristics in wide temperature range of 80-320 K by steps of 10K. By using the thermionic emission (TE) theory, the Phi(bo)(I-V) and n were found to depend strongly on temperature, and the n decreases with increasing temperature while the Phi(bo)(I-V) increases. The values of Phi(bo) and n ranged from 0.600 eV and 1.51(80 K) to 0.816 eV and 1.087 (320 K), respectively. Such behavior of Phi(bo) and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution (GD) of BHs at Au/n-GaAs interface. In the calculations, the electrical parameters of the experimental forward bias I-V characteristics of the Au/n-GaAs SBD with the homogeneity in the 80-320 K range have been explained by means of the TE, considering GD of BH with linear bias dependence. (c) 2012 Elsevier Ltd. All rights reserved.
Atıf için künye
Korucu, D., Efeoğlu, H., Turut, A., & Altindal, S. (2012). Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 15(5), 480–485. https://doi.org/10.1016/j.mssp.2012.03.005
BibTeX
@article{korucu2012-180874,
author = {Korucu, D. and Efeoğlu, Hasan and Turut, Abdulmecit and Altindal, S.},
title = {Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K},
journal = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
year = {2012},
volume = {15},
number = {5},
pages = {480--485},
issn = {1369-8001},
doi = {10.1016/j.mssp.2012.03.005},
url = {https://akademik.atauni.edu.tr/yayinlar/180874-evaluation-of-lateral-barrier-height-of-inhomogeneous-photolithography}
}