Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range

In this work, we investigated and compared the difference in temperature dependence of ideality values, barrier heights, and series resistances obtained using current-voltage (I-V) characteristics from various methods for Cu/n-type Si structures in the temperature range of 50 K-310 K by 20 K steps. From the I-V measurements using Cheung's and Norde methods, the temperature-dependent changes of ideality factors (n), barrier heights (phi(b)), and sequence resistances (R-S) were obtained. The experimental findings showed that all the values obtained from the Cu/n-type Si structure of the main parameters (n, phi(b), and R-S) decreased with increasing temperature, and that these values were also in strong agreement with each other. In addition, the interface states (N-SS) were derived from the current-voltage characteristics as a function of temperature (K), and the experiment revealed that with increasing temperature, the interface states decreased. The interface states values for 50 K and 310 K of the Cu/n-type Si structure changed to be 8.10 x 10(11) eV(-1) cm(-2) and 2.72 x 10(11) eV(-1) cm(-2), respectively.