Structural defects and their electrical activity in germanium implanted silicon

Zhang, J.P.; Fan, T.W.; Gwilliam, R.M.; Hemment, P.L.F.; Wen, J.Q.; Qian, Y.; Efeoğlu, Hasan; Evans, J.H.; Peaker, A.R.

doi:10.1016/0168-583x(93)95028-4

Makale Tam Makale Uluslararası 1993

Structural defects and their electrical activity in germanium implanted silicon

J.P. Zhang, T.W. Fan, R.M. Gwilliam, P.L.F. Hemment, J.Q. Wen, Y. Qian, Hasan Efeoğlu, J.H. Evans, A.R. Peaker

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS Cilt 74 · ss. 127–130 · 02.04.1993

DOI ile aç

Atıf için künye

Zhang, J., Fan, T., Gwilliam, R., Hemment, P., Wen, J., Qian, Y., Efeoğlu, H., Evans, J., & Peaker, A. (1993). Structural defects and their electrical activity in germanium implanted silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 74, 127–130. https://doi.org/10.1016/0168-583x%2893%2995028-4

BibTeX

@article{zhang1993-180861,
  author = {Zhang, J.P. and Fan, T.W. and Gwilliam, R.M. and Hemment, P.L.F. and Wen, J.Q. and Qian, Y. and Efeoğlu, Hasan and Evans, J.H. and Peaker, A.R.},
  title = {Structural defects and their electrical activity in germanium implanted silicon},
  journal = {NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
  year = {1993},
  volume = {74},
  pages = {127--130},
  issn = {0168-583X},
  doi = {10.1016/0168-583x(93)95028-4},
  url = {https://akademik.atauni.edu.tr/yayinlar/180861-structural-defects-and-their-electrical-activity-in-germanium-implanted-silicon}
}