Design of RF MEMS based oscillatory neural network for ultra high speed associative memories
Özet
Microelectromechanical systems are utilized alongside with transistor amplifiers and resistive connections for implementing of oscillatory associative memories. Phase locking is studied in such a network and all requirements of the circuit level implementation are satisfied. A very high gain trans-impedance amplifier operating in 1 GHz in addition to a novel automatic amplitude control circuit is employed to remove amplitude dynamics of the system. Requiring resonator characteristics are extracted and calculated as well. A new method for initialization of the network is proposed. Each neuron consumes 1.08 mW from a 1.8 V power supply. The convergence time of a typical network trained by Hebbian rule is less than 1.5 ns which results in an ultra high speed analog signal processing system. © 2013 Springer Science+Business Media New York.
Anahtar kelimeler
Atıf için künye
Baghelani, M., Ebrahımı, A., & Ghavifekr, H. B. (2014). Design of RF MEMS based oscillatory neural network for ultra high speed associative memories. Neural Processing Letters, 40(1), 93–102. https://doi.org/10.1007/s11063-013-9312-y
BibTeX
@article{baghelani2014-172502,
author = {Baghelani, Masoud and Ebrahımı, Afshın and Ghavifekr, Habib Badri},
title = {Design of RF MEMS based oscillatory neural network for ultra high speed associative memories},
journal = {Neural Processing Letters},
year = {2014},
volume = {40},
number = {1},
pages = {93--102},
issn = {1370-4621},
doi = {10.1007/s11063-013-9312-y},
url = {https://akademik.atauni.edu.tr/yayinlar/172502-design-of-rf-mems-based-oscillatory-neural-network-for-ultra-high-speed}
}