A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode
Özet
In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 x 10(-3) and 2.43 nm to the values of 35.56 nm, 1.98 x 10(-3) and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I-V) measurements at the room temperature. 2016 Elsevier B.V. All rights reserved.
Anahtar kelimeler
Atıf için künye
Turgut, G., Duman, S., Sönmez, E., & Ozcelik, F. S. (2016). A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 206, 9–16. https://doi.org/10.1016/j.mseb.2016.01.006
BibTeX
@article{turgut2016-151406,
author = {Turgut, G. and Duman, Songül and Sönmez, Erdal and Ozcelik, F. S.},
title = {A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode},
journal = {MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS},
year = {2016},
volume = {206},
pages = {9--16},
issn = {0921-5107},
doi = {10.1016/j.mseb.2016.01.006},
url = {https://akademik.atauni.edu.tr/yayinlar/151406-a-study-of-eu-incorporated-zno-thin-films-an-application-of-alznoeup-si}
}