Perovskite based hydrogen detection and electrical properties of n-Si/ BaTiO3 heterojunction
In this study, the electrical characterization of a heterojunction structure produced by coating powdered BaTiO3 from the perovskite family onto n-type silicon using the drop casting method was investigated at room temperature and as a function of temperature in a hydrogen atmosphere. The structural and optical characterization were evaluated using XRD analysis of the BaTiO3 powder, SEM - TEM images of the thin film structure, EDX spectrum, and UV analysis. The temperature-dependent current-voltage and alternating current changes of the nSi/BaTiO3 heterojunction were measured in a dry air atmosphere. According to the measurement results, the nSi/BaTiO3/Pt heterojunction device exhibited Schottky behavior. Furthermore, the sensor response of the heterojunction to hydrogen gas was calculated as 6.73. The hydrogen sensor response, measured at 50 degrees C at concentrations ranging from 500 ppm to 3%, increased in a concentration-dependent manner. Hydrogen detection measured at 100 degrees C shows a very good repeatability and stability at 20-min intervals in a 1% hydrogen atmosphere. The sensor response of n-Si/BaTiO3 heterojunction is about 3.71 +/- 4% in average for 70 days exposure to 1% hydrogen at 100 degrees C. Hydrogen gas tests were measured as a function of temperature and concentration changes. The obtained results are promising for the evaluation of the n-Si/BaTiO3 heterojunction as a hydrogen gas sensor.
- Journal
- INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
- Year
- 2026
- Volume
- 220
- ISSN
- 0360-3199
- eISSN
- 1879-3487
- DOI
- 10.1016/j.ijhydene.2026.154148
- WoS UID
- WOS:001701330900001