Numerical study on thermal stability Performance of 4H-SiC MOSFETs
Zulkifle, Nurul Amirah, Abd Aziz, Muhammad Hafiz, Seth, Muhammad Najmi Mohd, Noorasid, Nur Syamimi, Al-Ani, Oras Ahmed, Yakul, Merve, Arith, Faiz
4H-SiC MOSFETs offer superior performance and reliability in extreme conditions, making them a great option for high-power and high-temperature applications. However, thermal stability issues still hinder device performance improvements, which impact threshold stability, interface quality, and reliability. This work explores the issue by employing a 2D model that collectively integrates and disentangles the roles of electrical, thermal, and structural properties of 4H-SiC MOSFETs using COMSOL Multiphysics. Important electrical metrics are retrieved and examined under various heat conditions. The findings indicate that the V-th decreases from 3.05 to 2.80 V with increasing temperatures. On the other hand, the subthreshold slope rises noticeably from 41 mV/dec to 126 mV/dec with temperature. The results support the necessity of thermal control in the operational characteristics of 4H-SiC MOSFETs.
- Journal
- INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS
- Year
- 2026
- Volume
- 19
- Issue
- 1
- Pages
- 1-7
- ISSN
- 1985-5761
- eISSN
- 2232-1535
- WoS UID
- WOS:001676854700001