Nb<sub>2</sub>O<sub>5</sub>, SnO<sub>2</sub>, and Eu-Doped SnO<sub>2</sub> thin film gas sensors: synthesis and characterization
Cengiz, Furkan, Ezirmik, Kadri Vefa, Bingol, Ozan, Demirtas, Fatma Songur, Senocak, Taha Cagri
Metal oxide semiconductors (MOSs) are favored for gas sensing due to their high sensitivity, stability, and cost-effectiveness. An enhanced hydrogen detection is demonstrated by synthesizing and characterizing Nb2O5, SnO2, and Eu-doped SnO2 (Eu-SnO2) thin films via RF-PVD to address the limitations of conventional sensors. Their structural characterization reveals an amorphous Nb2O5 phase and a tetragonal crystalline structure for both the SnO2 and Eu-SnO2 films, which exhibit equiaxed grain morphologies. A gas sensing evaluation demonstrates that Nb2O5 only responds at high hydrogen concentrations (10.000 ppm). In contrast, SnO2 and Eu-SnO2 films successfully detect low concentrations of 100 and 50 ppm, respectively. These results confirm the superior potential of SnO2-based films, particularly with Eu doping, for efficient and highly responsive hydrogen gas sensing.
- Journal
- RUSSIAN PHYSICS JOURNAL
- Year
- 2026
- ISSN
- 1064-8887
- eISSN
- 1573-9228
- DOI
- 10.1007/s11182-026-03663-9
- WoS UID
- WOS:001663153700001