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Article 2025 · 5 citations

Exploring the dielectric and AC transport characteristics of Au/(Sn:Fe<sub>2</sub>O<sub>3</sub>)/n-Si diodes using impedance spectroscopy over extended frequency and voltage intervals

Bastug, A., Tascioglu, I., Khalkhali, A., Altindal, S., Yildirim, M., Saritas, Sevda

Abstract

This work focuses on the evaluation of essential dielectric characteristics of the (Sn:Fe2O3) interlayer, including the real and imaginary components of the complex dielectric constant (epsilon* = epsilon ' - j epsilon ''), electric modulus (M* = M ' + jM ''), and complex impedance (Z* = Z ' - jZ ''). To enhance the accuracy of the analysis related to dielectric response and charge transport mechanisms, capacitance and conductance were measured under varying frequencies (0.5 kHz to 2 MHz) and applied bias (+/- 3 V). The epsilon '' and tan delta versus ln(f) profiles reveal distinct peak formations within the voltage window of 0.7 V to 3 V, with their shifting positions attributed to voltage-induced rearrangements of trapped charges and polarization effects. Dielectric loss (tan delta), AC conductivity (sigma ac), and phase angle (theta) were also derived from the experimental data. The analysis confirms a strong dependence of these parameters on both frequency and voltage, particularly at low and intermediate frequencies where interface states, Maxwell-Wagner polarization, and series resistance significantly affect the response. Remarkably, the (Sn:Fe2O3) interlayer exhibits a high dielectric constant (epsilon ' approximate to 337.8 at 0.5 kHz), surpassing that of SiO2 by nearly 89 times, highlighting its potential as a high-k dielectric with enhanced energy storage capability in metal-semiconductor structures. The impedance spectra (Nyquist plots) show single semicircles, typical of Debye-type relaxation. Additionally, the ln(sigma ac) vs. ln(f) graph exhibits three distinct linear regions, each corresponding to different dominant conduction processes active at low, mid, and high frequencies.

Keywords
ELECTRIC MODULUS CONDUCTIVITY RELAXATION BEHAVIOR
WoS Categories
Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter
Citation
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Year
2025
Volume
36
Issue
28
ISSN
0957-4522
eISSN
1573-482X
DOI
10.1007/s10854-025-15906-5
WoS UID
WOS:001587935800005
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