Article 2025 · 2 citations

Hydrogen detection and electrical properties of titanium silicate Schottky diode fabricated by RF-magnetron sputtering method

Tasyurek, Lutfi Bilal, Kilinc, Necmettin

Abstract

In this study, the electrical characterization of Schottky contact produced by coating TiSiO4 from the perovskite like layered family on p and n type Si by using RF-magnetron sputtering method was investigated depending on gas atmosphere and temperature. The morphological structure of the TiSiO4 thin film was examined by XRD analysis, FE-SEM images, and EDX spectrum. According to AFM images, the average roughness was found to be 0.811 nm. Temperature dependent I-V and AC characteristics of p-Si/TiSiO4 and n-Si/TiSiO4 devices were measured under dry air flow. In addition, frequency dependent C-V measurements of the devices were performed to investigate the capacitance properties of the scheelite-type interface. Also, the sensor response obtained with this device was as high as 267.7. Hydrogen sensing properties of p-Si/TiSiO4/Pt structure were investigated depending on concentration, temperature and interference gases. Electrical parameters with p type Si provided better results. The p-Si/TiSiO4/Pt sensor device showed Schottky behavior at low temperatures, but the device changed to ohmic behavior with increasing temperature.

Keywords

RF-Magnetron sputtering Hydrogen sensor Electrical characterization Perovskite like layers Scheelite-type structure TiSiO4 THIN-FILM SEMICONDUCTOR OXIDES NANOPARTICLES STABILITY SENSORS

WoS Categories

Chemistry, Physical Electrochemistry Energy & Fuels

Citation

Journal: INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
Year: 2025
Volume: 144
Pages: 738-745
ISSN: 0360-3199
eISSN: 1879-3487
DOI: 10.1016/j.ijhydene.2025.03.135
WoS UID: WOS:001519038000001

Open via DOI